HVC135

HVC135 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-818A (Z) Rev 1 Feb. 2000 Features Adopting the trench structure improves low capacitance.(C=0.6pF max) Low forward resistance. (rf=2.0 Ω max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency. Ordering Information Type No. HVC135 Laser Mark P5 Package Code UFP Outline Cathode mark Mark 1 P5 2 1. Cathode 2. Anode HVC135 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 0.1 0.9 0.6 2.0 — Unit µA V pF Ω V Test Condition VR = 60V I F = 2 mA VR = 1V, f = 1 MHz I F = 2mA, f = 100 MHz C = 200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR > 100nA at VR =60 V 2 HVC135 Main Characteristic 10 -2 -8 10 10 -4 10 -9 Forward current I F (A) Reverse current IR (A) 10 -6 10 -10 Ta= 75°C -11 10 10 -8 Ta= 25°C Ta= 50°C Ta= 75°C Ta= 50°C 10 -12 10-13 Ta= 25°C 10 -10 10 -12 0 0.2 0.4 0.6 0.8 1.0 10 -14 0 20 40 60 80 100 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage ...