HUFA76413DK8T
January 2003
HUFA76413DK8T
N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56mΩ
General Descript...
HUFA76413DK8T
January 2003
HUFA76413DK8T
N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56mΩ
General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching
regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Applications
Motor and Load Control Powertrain Management
Features
150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V
D1 (8)
D1 (7)
D2 (6)
D2 (5)
1
SO-8
S1 (1) G1 (2) S2 (3) G2 (4)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TC = 125oC, VGS = 5V, Rθ JA = 228oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 5.1 4.8 1 Figure 4 260 2.5 ...