HUFA75433S3S

HUFA75433S3S March 2002 HUFA75433S3S N-Channel UltraFET® MOSFETs 60V, 64A, 16mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Applications Motor and Load Control Powertrain Management Features 175°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.016Ω, VGS = 10V D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 125oC, VGS = 10V, RθJA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 64 5 Figure 4 250 150 1 -55 to 175 A A A mJ W W/oC oC Ratings 60 ±20 Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263 Thermal Resista...