HUFA75309T3ST

HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery operated products. Formerly developmental type TA75309. Features 3A, 55V Ultra Low On-Resistance, rDS(ON) = 0.070Ω Diode Exhibits Both High Speed and Soft Recovery Temperature Compensating PSPICE® Model Thermal Impedance SPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUFA75309T3ST PACKAGE SOT-223 5309 S BRAND G NOTE: HUFA75309T3ST is available only in tape and reel. Packaging SOT-223 DRAIN (FLANGE) GATE DRAIN SOURCE This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be fo...