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HUF76639P3 Dataheets PDF



Part Number HUF76639P3
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel MOSFET
Datasheet HUF76639P3 DatasheetHUF76639P3 Datasheet (PDF)

HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pul.

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HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.026Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve HUF76639P3 HUF76639S3S Symbol D • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 76639P 76639S HUF76639P3 HUF76639S3S G S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76639S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76639P3, HUF76639S3S UNITS V V V A A A A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 100 100 ±16 50 51 35 34 Figure 4 Figures 6, 17, 18 180 1.2 -55 to 175 300 260 W W/oC oC oC oC 1. TJ = 25oC to 150oC. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 4-1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures. UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation. SABER© is a Copyright of Analogy Inc. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999. HUF76639P3, HUF76639S3S Electrical Specifications PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS IDSS IGSS VGS(TH) rDS(ON) ID = 250µA, VGS = 0V (Figure 12) ID = 250µA, VGS = 0V , TC = -40oC (Figure 12) Zero Gate Voltage Drain Current VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA (Figure 11) ID = 51A, VGS = 10V (Figures 9, 10) ID = 35A, VGS = 5V (Figure 9) ID = 34A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RθJC RθJA TO-220 and TO-263 0.83 62 oC/W oC/W TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 100 90 - - 1 250 ±100 3 0.026 0.027 0.028 V V µA µA nA VGS = ±16V 1 - 0.023 0.024 0.025 V Ω Ω Ω SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 50V, ID = 35A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 50V, ID = 51A VGS = 10V, RGS = 12Ω (Figures 16, 21, 22) VDD = 50V, ID = 34A VGS = 4.5V, RGS = 12Ω (Figures 15, 21, 22) 17 207 83 136 336 328 ns ns ns ns ns ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge .


HUF76639P3 HUF76639P3 HUF76639S3S


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