HUF76107P3

HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76107. Features Logic Level Gate Drive 20A, 30V Ultra Low On-Resistance, rDS(ON) = 0.052Ω Temperature Compensating PSPICE® Model Temperature Compensating SABER© Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB BRAND 76107P Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 70 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark...