HUF76105SK8

HUF76105SK8 Data Sheet May 1999 File Number 4719.1 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA76105. Features Logic Level Gate Drive 5.5A, 30V Ultra Low On-Resistance, rDS(ON) = 0.050Ω Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models.htm Peak Current vs Pulse Width Curve UIS Rating Curve Transient Thermal Impedance Curve vs Board Mounting Area Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HUF76105SK8 PACKAGE MS-012AA BRAND 76105SK8 NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76105SK8T. Symbol NC(1) DRAIN(8) SOURCE(2) DRA...