HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Data Sheet
October 2013
N-Channel UltraFET Power MOSFET 100 V, 56 A, ...
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Data Sheet
October 2013
N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.
Formerly developmental type TA75639.
Ordering Information
PART NUMBER HUF75639G3 HUF75639P3 HUF75639S3ST HUF75639S3
PACKAGE TO-247 TO-220AB TO-263AB TO-262AA
BRAND 75639G 75639P 75639S 75639S
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (TAB)
Fe...