HUF75329D3S

HUF75329D3, HUF75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329. Features 20A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER© Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models.htm Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUF75329D3 HUF75329D3S PACKAGE TO-251AA TO-252AA BRAND 75329D 75329D G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST. S Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) 76 CAUTION: These d...