HTB50-TP

Current Transducers HTB 50 .. 400-P and HTB 50 .. 100-TP For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 50 .. 400 A Electrical data Primary nominal r.m.s. current IPN (A) 50 100 200 300 400 Primary current measuring range IP (A) ±150 ±300 ±500 ±600 ±600 Type HTB 50-P, HTB 50-TP1) HTB 100-P, HTB 100-TP1) HTB 200-P HTB 300-P HTB 400-P Features Hall effect measuring principle Galvanic isolation between primary Isolation voltage 2500V Low power consumption Wide power supply: ±12V to ±15V Primary bus bar option for 50A and 100A version for ease of connection and secondary circuit VC IC Vd RIS VOUT ROUT RL Supply voltage (±5 %) 2) Current consumption R.m.s. voltage for AC isolation test, 50/60 Hz, 1 mn Isolation resistance @ 500 VDC Output voltage @ ± IPN, RL = 10 kΩ, TA = 25°C Output internal resistance Load resistance ±12 .. ±15 V <±15 mA 2.5 kV >500 MΩ ±4 V 100 Ω ≥10 kΩ Advantages Small size and space saving Only one design for wide current Accuracy - Dynamic performance data ε X L VOE VOH VOT TCε G tr f Accuracy @ IPN, TA = 25°C (without offset) Linearity (0 .. ± IPN) Electrical offset voltage, TA = 25°C Hysteresis offset voltage @ IP = 0; after an excursion of 3 x IPN Thermal drift of VOE HTB 50-(T)P HTB 100-(T)P..400-P <±1 <±1 <±30 % of IPN % of IPN mV High immunity to external interference. ratings ra...