HSU88

HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G(Z) Rev 7 Dec 1999 Features Low capacitance. (C=0.8pF max) Low forward voltage. Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU88 Laser Mark 9 Package Code URP Outline Cathode mark Mark 1 9 2 1. Cathode 2. Anode HSU88 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 -55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current I R1 I R2 Capacitance ESD-Capability *1 Min 350 500    30 Typ       Max 420 580 0.2 10 0.8  Unit mV µA Test Condition I F = 1 mA I F = 10 mA VR = 2V VR = 10V C  pF V VR = 0V, f = 1 MHz C = 200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V 2 HSU88 Main Characteristic 10 -2 10 -6 (A) 10 -3 Reverse current I R (A) 10 -7 Ta= 75°C Forward current IF 10 -4 10 -8 Ta= 25°C 10 -5 Ta= 25°C Ta= 75°C 10 -9 10 -6 10 0 0.2 0.4 0.6 0.8 Forward voltage V F (V) -10 0 6 8 4 2 Reverse voltage V R (V) 10 Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10 -1 1.0 Reverse voltage V R (V) 10 Fig.3 Capacitance Vs. Reverse voltage 3 HSU88 Package D...