HSU277

HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch ADE-208-018G(Z) Rev 6 Nov. 1998 Features Low forward resistance. (rf = 0.7 Ω max) Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information Type No. HSU277 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 3 2 1. Cathode 2. Anode HSU277 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature Symbol VR Pd Tj Tstg Topr Value 35 150 125 -45 to +125 -20 to +60 Unit V mW °C °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Forward voltage Reverse current Capacitance Forward resistance Symbol VR VF IR C rf Min 35 — — — — Typ — — — — — Max — 1.0 50 1.2 0.7 Unit V V nA pF Ω Test Condition I R = 10µA I F = 10 mA VR = 25V VR = 6V, f = 1 MHz I F = 2 mA, f = 100 MHz 2 HSU277 Main Characteristic 10 -2 10 -3 Reverse current I R (A) Forward current I F (A) -6 10 10 -7 10 -4 -5 10 -8 10 10 -9 10 10 -6 -10 10-7 10 -8 10 -9 10 10 -11 -12 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage V F (V) -13 0 10 20 30 40 50 Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage Fig.1 Forward current Vs. Forward voltage 10 f=1MHz 2.5 f=100MHz 2.0 Forward resistance rf ( Ω ) Capacitance C (pF) 1.5 1.0 1.0 0.5 10 -1 0 10 Reverse voltage V R (V) 40 1.0 10-4 10-3 Forward current I F (A) 10 -2 Fig.3 Capacitance Vs. Reverse voltage Fig.4 Forward res...