HSU227
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-779(Z) Rev 0 Mar. 1999 Features
• Low capacitanc...
HSU227
Silicon
Schottky Barrier Diode for High Speed Switching
ADE-208-779(Z) Rev 0 Mar. 1999 Features
Low capacitance. (C=3.0pF max) Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HSU227 Laser Mark S3 Package Code URP
Outline
Cathode mark Mark 1
S3
2 1. Cathode 2. Anode
HSU227
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25 50
*2
Unit V mA mA °C °C
IFSM
Tj
200 125 -55 to +125
Tstg
1. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Symbol VF IR C Min — — — Typ 0.29 0.3 2.45 Max 0.35 2.0 3.0 Unit V µA pF Test Condition I F = 1mA VR = 20V VR = 1V, 1=1MHz
2
HSU227
Main Characteristic
1.0 Pulse test 10
Forward current IF (A)
-1
10
-4
Pulse test 10
-5
10
-2
10-3
Reverse current I R (A)
10
-6
10 -4
-5
10 10
-7
10-6
0
0.1
0.2
0.3
0.4
0.5
0.6
10-8 0 5 10 15 20 25 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
10 f=1MHz
Capacitance C (pF)
1.0
10-1 1.0
10 Reverse voltage VR (V)
40
Fig.2 Capacitance Vs. Reverse voltage
3
HSU227
Package Dimensions
Unit : mm
Cathode Mark 1.25±0.15 0.3±0.15
1
S3
1.7±0.15 2.5±0.15
2
1. Cathode 2. Anode 0 — 0.10 H...