HYB3165800AJ-40

8M x 8-Bit Dynamic RAM ( 4k & 8k Refresh) HYB 3164800AJ/AT(L) -40/-50/-60 HYB 3165800AJ/AT(L) -40/-50/-60 Advanced Information 8 388 608 words by 8-bit organization 0 to 70 °C operating temperature Fast Page Mode operation Performance: -40 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/write cycle time Fast page mode cycle time 40 10 20 75 30 -50 50 13 25 90 35 -60 60 15 30 110 40 ns ns ns ns ns Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 396 mW active ( HYB 3164800AJ/AT(L) -40) max. 324 mW active ( HYB 3164800AJ/AT(L) -50) max. 270 mW active ( HYB 3164800AJ/AT(L) -60) max. 558 mW active ( HYB 3165800AJ/AT(L) -40) max. 468 mW active ( HYB 3165800AJ/AT(L) -50) max. 378 mW active ( HYB 3165800AJ/AT(L) -60) 7.2 mW standby (LVTTL) 3.24 mW standby (LVCMOS) 720 µW standby for L-versions Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh (L-version only) 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800AJ/AT) 4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800AJ/AT) 256 msec refresh period for L-versions Plastic Package: P-SOJ-32-1 400 mil P-TSOPII-32-1 400 mil HYB 3164(5)800AJ HYB 3164(5)800AT(L) Semiconductor Group 1 6.97 HYB3164(5)800AJ/AT(L)-40/-50/-60 8M x 8-DRAM This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMO...