HYB3165165TL-50

4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164165T(L) -50/-60 HYB 3165165T(L) -50/-60 Preliminary Information 4 194 304 words by 16-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164165T(L)-50) max. 360 active mW ( HYB 3164165T(L)-60) max. 504 active mW ( HYB 3165165T(L)-50) max. 432 active mW ( HYB 3165165T(L)-60) 7.2 mW standby (TTL) 720 W standby (MOS) 14.4 mW Self Refresh (L-version only) Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Hyper page mode (EDO) capability 2 CAS / 1 WE byte control 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165T(L)) 4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165T(L)) Plastic Package: P-TSOPII-54-1 500 mil HYB 3164(5)165T(L) Semiconductor Group 31 HYB3164(5)165T(L)-50/-60 4M x 16 EDO-DRAM This HYB3164(5)165 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high perform...