HYB3164800T-60

8M x 8-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164800J/T -50/-60 HYB 3165800J/T -50/-60 Preliminary Information 8 388 608 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164800J/T-50) max. 360 active mW ( HYB 3164800J/T-60) max. 504 active mW ( HYB 3165800J/T-50) max. 432 active mW ( HYB 3165800J/T-60) 7.2 mW standby (TTL) 720 W standby (MOS) Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Fast page mode capability 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800J/T) 4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800J/T) Plastic Package: P-SOJ-34-1 500 mil HYB 3164(5)800J P-TSOPII-34-1 500 mil HYB 3164(5)800T Semiconductor Group 121 HYB 3164(5)800J/T-50/-60 8M x 8-DRAM This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in SIEMENS/IBM’s most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V po...