HYB314175BJ-60

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Preliminary Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (-60 version) CAS access time: 13ns (-50 & -55 version) 15 ns (-60 version) Cycle time: 89 ns (-50 version) 94 ns (-55 version) 104 ns (-60 version) Hype page mode (EDO) cycle time 20 ns (-50 & -55 version) 25 ns (-60 version) High data rate 50 MHz (-50 & -55 version) 40 MHz (-60 version) Single + 3.3 V (±0.3 V) supply with a builtin VBB generator Low Power dissipation max. 450 mW active (-50 version) max. 432 mW active (-55 version) max. 378 mW active (-60 version) Standby power dissipation 7.2 mW standby (TTL) 3.6 mW max. standby (CMOS) 0.72 mW max. standby (CMOS) for Low Power Version Output unlatched at cycle end allows twodimensional chip selection Read, write, read-modify write, CASbefore-RAS refresh, RAS-only refresh, hidden-refresh and hyper page (EDO) mode capability 2 CAS / 1 WE control Self Refresh (L-Version) All inputs and outputs TTL-compatible 512 refresh cycles / 16 ms 512 refresh cycles / 128 ms Low Power Version only Plastic Packages: P-SOJ-40-1 400mil width The HYB 314175BJ/BJL is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS ...