Document
ADA10000
Linear Amplifier MMIC
Data Sheet - Rev 2.3
FEATURES
• • • • • • • High Linearity : +15 dBm IIP3 (+8 V supply) Low Distortion Low Noise Figure: 2.0 dB 15 dB Gain Single +4 V to +9 V Supply Wide Bandwidth: 50 MHz to 1 GHz SOIC-16 and SOT-89 Package Options
S3 Package Modified 16 Pin SOIC
S24 Package SOT-89
PRODUCT DESCIPTION
The ADA10000 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, and CATV Drop Amplifiers. Offered in both a modified 16 lead SOIC package and SOT-89 package, it is well suited for use in amplifiers where small size, reduced component count, and high reliability are important.
RF Input
RF Output / Bias
Figure 1: Block Diagram
06/2003
ADA10000
1 2 3 4 5 6 7 8
GND GND GND GND GND RFIN GND GND
GND GND RFOUT GND GND GND GND GND
16 15 14 13 12 11 10 9
Figure 2: Pinout - S3 Package
Table 1: Pin Description - S3 Package
PIN 1 2 3 4 5 6 7 8
NAME GND GND GND GND GND RFIN GND GND
DESCRIPTION Ground Ground Ground Ground Ground RF Input Ground Ground
PIN 16 15 14 13 12 11 10 9
NAME GND GND RFOUT GND GND GND GND GND
DESCRIPTION Ground Ground RF Output / Bias Ground Ground Ground Ground Ground
2
Data Sheet - Rev 2.3 06/2003
ADA10000
GND
4
1
RF IN
2
GND
3
RF OUT
Figure 3: Pinout - S24 Package
Table 2: Pin Description - S24 Package
PIN 1 2 3 4 NAME RFIN GND RFOUT GND DESCRIPTION RF Input Ground RF Output / Bias Ground
Data Sheet - Rev 2.3 06/2003
3
ADA10000
ELECTRICAL CHARACTERISTICS
Table 3: Absolute Minimum and Maximum Ratings
PARAMETER Supply (S3 package: pin 14) (S24 package: pin 3) RF Power at Input (S3 package: pin 6) (S24 package: pin 1) Storage Temperature
MIN 0
MAX +12
UNIT VD C
-65
+10 +150
dB m °C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Notes: (1) RF input pin must be AC-coupled. No DC external bias should be applied.
Table 4: Operating Ranges PARAMETER RF Input / Output Frequency Supply Voltage (VDD) Case Temperature MIN 50 +4 -40 TYP +8 MAX 1000 +9 +85
(1)
UNIT MHz VD C °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) Median time to failure will degrade above this temperature.
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Data Sheet - Rev 2.3 06/2003
ADA10000 Table 5: Electrical Specifications (TA = +25 °C, VDD = +8 VDC, 75 Ω system, see Figures 4 and 5) PARAMETER CSO (1) / CSO (2) CTB Gain Noise Figure 2nd Order Input Intercept Point (IIP2) (3) 3rd Order Input Intercept Point (IIP3) (3) Thermal Resistance Current Consumption (4)
(1)
MIN 60 / 62 65 / 74 14 +29 +13 50
TYP 15 2.0 +34 +15 -
MAX 3.5 35 20 150
UNIT dB c dB c dB dB dB m dB m
COMMENT
/CTB
(2)
°C/W mA
S 3 p a cka g e S 2 4 p a cka g e
Notes: (1) 160 channels, +17 dBmV per channel (measured at output), 6 MHz channel spacing. (2) 80 channels, +19 dBmV per channel (measured at output), 6 MHz channel spacing. (3) Two tones, -10 dBm per tone at input. (4) The device can be operated at VDD = +6 VDC for lower power dissipation. Refer to Figures 7, 8, 13, and 16 for performance variation with supply voltage.
Data Sheet - Rev 2.3 06/2003
5
ADA10000
VDD 3.9 uH 0.1 uF
1000 pF RFOUT 1000 pF RFIN 5.6 nH
ADA10000
Figure 4: Test Circuit - S3 Packaged Device (75 Ω terminations)
VDD 820 nH 0.01 uF
1000 pF RFIN 0.5 pF 100 W
10 nH
1
ADA10000
2,4
3
180 pF RFOUT 0.5 pF 50 W
Figure 5: Test Circuit - S24 Packaged Device (75 Ω terminations)
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Data Sheet - Rev 2.3 06/2003
ADA10000
PERFORMANCE DATA
As measured in test circuits shown in Figures 4 and 5.
18
Figure 6: Gain and Noise Figure vs. Frequency - S3 Packaged Device o (TA = +25 C, VDD = +8 V, 75 W system)
4.0
16.0
Figure 7: Gain and Noise Figure vs. Supply Voltage - S3 Packaged Device (TA = +25 oC, f = 500 MHz, 75 W system)
2.2
17 16
3.5
15.8
2.1
Noise Figure (dB)
3.0 2.5 2.0 Gain NF
Gain (dB)
15 14
Gain (dB)
15.6
2.0
15.4
1.9
13 12 0 200 400 600
1.5 1.0 1000
15.2
Gain NF
1.8
15.0 4 5 6 7 8 9
1.7
800
Frequency (MHz)
Supply Voltage (V)
40 35 30
Figure 8: IIP2 and IIP3 vs. Supply Voltage - S3 Packaged Device (TA = +25 oC, 75 W system)
Figure 9: Output Power vs. Input Power S3 Packaged Device (TA = +25 oC, VDD = +8 V, f = 500 MHz, 75 W system)
26 24
Output Power (dBm)
IIP2, IIP3 (dBm)
22
25 20 15 10 5 4 5 6 7 8 9 IIP2 IIP3
20
18
16
14 0 2 4 6 8 10 12
Supply Voltage (V) Notes: 1. IIP2 measured at 986.5 MHz; Input = two tones at 55.25 MHz and 931.25 MHz at -10 dBm. 2. IIP3 measured with two tones at the input: 986.5 MHz and 992.5 MHz at -10 dBm.
Input Power (dBm)
Figure 10: Unmatched Device Input Impedance S3 Packaged Device o (TA = +25 C, VDD = +8 V, 75 W system)
Figure 11: Unma.