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ADA10000 Dataheets PDF



Part Number ADA10000
Manufacturers ANADIGICS Inc
Logo ANADIGICS  Inc
Description Linear Amplifier MMIC Data Sheet - Rev 2.3
Datasheet ADA10000 DatasheetADA10000 Datasheet (PDF)

ADA10000 Linear Amplifier MMIC Data Sheet - Rev 2.3 FEATURES • • • • • • • High Linearity : +15 dBm IIP3 (+8 V supply) Low Distortion Low Noise Figure: 2.0 dB 15 dB Gain Single +4 V to +9 V Supply Wide Bandwidth: 50 MHz to 1 GHz SOIC-16 and SOT-89 Package Options S3 Package Modified 16 Pin SOIC S24 Package SOT-89 PRODUCT DESCIPTION The ADA10000 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber R.

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ADA10000 Linear Amplifier MMIC Data Sheet - Rev 2.3 FEATURES • • • • • • • High Linearity : +15 dBm IIP3 (+8 V supply) Low Distortion Low Noise Figure: 2.0 dB 15 dB Gain Single +4 V to +9 V Supply Wide Bandwidth: 50 MHz to 1 GHz SOIC-16 and SOT-89 Package Options S3 Package Modified 16 Pin SOIC S24 Package SOT-89 PRODUCT DESCIPTION The ADA10000 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, and CATV Drop Amplifiers. Offered in both a modified 16 lead SOIC package and SOT-89 package, it is well suited for use in amplifiers where small size, reduced component count, and high reliability are important. RF Input RF Output / Bias Figure 1: Block Diagram 06/2003 ADA10000 1 2 3 4 5 6 7 8 GND GND GND GND GND RFIN GND GND GND GND RFOUT GND GND GND GND GND 16 15 14 13 12 11 10 9 Figure 2: Pinout - S3 Package Table 1: Pin Description - S3 Package PIN 1 2 3 4 5 6 7 8 NAME GND GND GND GND GND RFIN GND GND DESCRIPTION Ground Ground Ground Ground Ground RF Input Ground Ground PIN 16 15 14 13 12 11 10 9 NAME GND GND RFOUT GND GND GND GND GND DESCRIPTION Ground Ground RF Output / Bias Ground Ground Ground Ground Ground 2 Data Sheet - Rev 2.3 06/2003 ADA10000 GND 4 1 RF IN 2 GND 3 RF OUT Figure 3: Pinout - S24 Package Table 2: Pin Description - S24 Package PIN 1 2 3 4 NAME RFIN GND RFOUT GND DESCRIPTION RF Input Ground RF Output / Bias Ground Data Sheet - Rev 2.3 06/2003 3 ADA10000 ELECTRICAL CHARACTERISTICS Table 3: Absolute Minimum and Maximum Ratings PARAMETER Supply (S3 package: pin 14) (S24 package: pin 3) RF Power at Input (S3 package: pin 6) (S24 package: pin 1) Storage Temperature MIN 0 MAX +12 UNIT VD C -65 +10 +150 dB m °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Notes: (1) RF input pin must be AC-coupled. No DC external bias should be applied. Table 4: Operating Ranges PARAMETER RF Input / Output Frequency Supply Voltage (VDD) Case Temperature MIN 50 +4 -40 TYP +8 MAX 1000 +9 +85 (1) UNIT MHz VD C °C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) Median time to failure will degrade above this temperature. 4 Data Sheet - Rev 2.3 06/2003 ADA10000 Table 5: Electrical Specifications (TA = +25 °C, VDD = +8 VDC, 75 Ω system, see Figures 4 and 5) PARAMETER CSO (1) / CSO (2) CTB Gain Noise Figure 2nd Order Input Intercept Point (IIP2) (3) 3rd Order Input Intercept Point (IIP3) (3) Thermal Resistance Current Consumption (4) (1) MIN 60 / 62 65 / 74 14 +29 +13 50 TYP 15 2.0 +34 +15 - MAX 3.5 35 20 150 UNIT dB c dB c dB dB dB m dB m COMMENT /CTB (2) °C/W mA S 3 p a cka g e S 2 4 p a cka g e Notes: (1) 160 channels, +17 dBmV per channel (measured at output), 6 MHz channel spacing. (2) 80 channels, +19 dBmV per channel (measured at output), 6 MHz channel spacing. (3) Two tones, -10 dBm per tone at input. (4) The device can be operated at VDD = +6 VDC for lower power dissipation. Refer to Figures 7, 8, 13, and 16 for performance variation with supply voltage. Data Sheet - Rev 2.3 06/2003 5 ADA10000 VDD 3.9 uH 0.1 uF 1000 pF RFOUT 1000 pF RFIN 5.6 nH ADA10000 Figure 4: Test Circuit - S3 Packaged Device (75 Ω terminations) VDD 820 nH 0.01 uF 1000 pF RFIN 0.5 pF 100 W 10 nH 1 ADA10000 2,4 3 180 pF RFOUT 0.5 pF 50 W Figure 5: Test Circuit - S24 Packaged Device (75 Ω terminations) 6 Data Sheet - Rev 2.3 06/2003 ADA10000 PERFORMANCE DATA As measured in test circuits shown in Figures 4 and 5. 18 Figure 6: Gain and Noise Figure vs. Frequency - S3 Packaged Device o (TA = +25 C, VDD = +8 V, 75 W system) 4.0 16.0 Figure 7: Gain and Noise Figure vs. Supply Voltage - S3 Packaged Device (TA = +25 oC, f = 500 MHz, 75 W system) 2.2 17 16 3.5 15.8 2.1 Noise Figure (dB) 3.0 2.5 2.0 Gain NF Gain (dB) 15 14 Gain (dB) 15.6 2.0 15.4 1.9 13 12 0 200 400 600 1.5 1.0 1000 15.2 Gain NF 1.8 15.0 4 5 6 7 8 9 1.7 800 Frequency (MHz) Supply Voltage (V) 40 35 30 Figure 8: IIP2 and IIP3 vs. Supply Voltage - S3 Packaged Device (TA = +25 oC, 75 W system) Figure 9: Output Power vs. Input Power S3 Packaged Device (TA = +25 oC, VDD = +8 V, f = 500 MHz, 75 W system) 26 24 Output Power (dBm) IIP2, IIP3 (dBm) 22 25 20 15 10 5 4 5 6 7 8 9 IIP2 IIP3 20 18 16 14 0 2 4 6 8 10 12 Supply Voltage (V) Notes: 1. IIP2 measured at 986.5 MHz; Input = two tones at 55.25 MHz and 931.25 MHz at -10 dBm. 2. IIP3 measured with two tones at the input: 986.5 MHz and 992.5 MHz at -10 dBm. Input Power (dBm) Figure 10: Unmatched Device Input Impedance S3 Packaged Device o (TA = +25 C, VDD = +8 V, 75 W system) Figure 11: Unma.


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