AM1517-012

AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042) hermeticallysealed ORDER CODE AM1517-012 BRANDING 1517-12 PIN CONNECTION DESCRIPTION The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5 − 1.7 GHz frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refractory/Gold metallization system. The AM1517-012 is supplied in the AMPAC™ Hermetic/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤100°C) 27 1.25 30 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 5.5 °C/W *Applies only to rated RF amplifier operation September 1992 1/6 AM1517-012 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO ICBO hFE IC = 4mA IE = 4mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA IC = .8A 4...