AM1214-100
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALL...
AM1214-100
RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. WITH 6.0 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-100 BRANDING 1214-100
DESCRIPTION The AM1214-100 device is a high power Class C
transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-100 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC ≤ 100˚C)
270 13.5 32 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.55 °C/W
*Applies only to rated RF amplifier operation
August 1992
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AM1214-100
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Value Symbol Test Conditions Min. Typ. Max. U...