AM1011-500

AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN . 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY . SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE . EMITTER SITE BALLASTED OVERLAY GEOMETRY . REFRACTORY/GOLD METALLIZATION . LOW THERMAL RESISTANCE . INTERNAL INPUT/OUTPUT MATCHING . CHARACTERIZED UNDER 32µS.,2% DUTY CYCLE PULSE CONDITIONS .400 x .600 2LFL (M198) hermetically sealed ORDER CODE AM1011-500 BRANDING 1011-500 DE S CRI P T IO N The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-500 is supplied in the SIXPAC™ Hermetic metal/ceramic package with internal input/output matching structures. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter PDISS IC VCC TJ Power Dissipation* Device Current* (TC ≤ 100°C) Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) T ST G Storage Temperature Value 1,3 60 27 55 250 − 65 to +200 Unit W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation 0.11 °C/W ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol B...