AM1011-070

AM1011-070 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS ....... REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 70 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermeticaly sealed ORDER CODE AM1011-70 BRANDING 1011-70 DESCRIPTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding severe output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-070 is supplied in the AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symb ol PDISS IC VCC TJ TSTG Pa ra met er Power Dissipation* (TC ≤ 100°C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation Value 200 8.0 32 250 − 65 to +200 Unit W A V °C °C 0.68 °C/W September 1992 1/4 AM1011-070 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symb o l Test Conditions BVC...