AM0912-080

AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM0912-080 BRANDING 0912-80 DESCRIPTION The AM0912-080 Avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specialized applications including JTIDS where reduced power provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0 912-08 0 is ho used in the unique AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤100˚C) 220 7.0 50 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.80 °C/W *Applies only to rated RF amplifier operation September 1992 1/3 AM0912-080 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Val...