ASI2010

ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: PG = 5 dB min. at 10 W/ 2,000 MHz Hermetic Microstrip Package Omnigold™ Metalization System L G H J F I K M NP DIM A B MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 1.5 A 35 V 35 W @ TC = 25 C -65 OC to +200 OC -65 C to +200 C 5.0 C/W O O O O C D E F G H I J K L M N P ORDER CODE: ASI10530 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob PG ηC IC = 5 mA IC = 15 mA IE = 1 mA VCB = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 5.0 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 28 V VCC = 28 V IC = 1000 mA f = 1.0 MHz POUT = 10 W f = 2.0 GHz 15 120 7.5 5.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...