ASD500V

Advanced Schottky Barrier Diodes ASD500V Surface mount small signal type Extermely thin package Low stored charge Majority carrier conduction R0.3 (0.012) Typ. Formosa MS 0.087 (2.2) 0.071 (1.8) 0.012(0.3) Typ. 0.055 (1.4) 0.039 (1.0) 0.043 (1.1) 0.028 (0.7) Mechanical data Case : Molded plastic, 0805 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram 0805 MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Repetitive peak reverse voltage Continuous reverse voltage Mean rectifying current Forward surge current Capacitance between terminals Storage temperature Operating temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1MHz and applied 10VDC reverse voltage CONDITIONS Symbol VRM VR IO IFSM CT TJ TSTG -40 -40 20 +125 +125 MIN. TYP. MAX. 45 40 100 1000 UNIT V V mA mA pF o o C C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER Forward voltage Reverse current IF = 10 mA DC VR = 10 V CONDITIONS Symbol VF IR MIN. TYP. MAX. 0.45 1 UNIT V uA RATING AND CHARACTERISTIC CURVES (ASD500V) FIG.1-TYPICAL FORWARD CHARACTERISTICS 1000m INSTANTANEOUS FORWARD CURRENT,(A) FIG.2 - TYPICAL REVERSE CHARACTERISTICS 100 O Typ. pulse measurement 100m 10m 1m 100u 10u 1u Ta = REVERSE CURRENT , (uA) Ta = 125 C 10 Ta = 75 C O 5C O 12 Ta = 75 C O 1 Ta = 25 C 100n Ta = -25 C Typ. pulse measurement 5 10 15 20 25...