AS177-86

Preliminary GaAs IC High Isolation Positive Control SPDT Switch DC–3.0 GHz AS177-86 Features I Positive Voltage Control (0/+3, +5 V) I High Isolation (50 dB @ 0.9, 1.9 GHz) I Low DC Power Consumption I Ideal for GSM, PCS, 3G and ISM 2.4 GHz Applications I Miniature Low Cost MSOP-10 Plastic Package MSOP-10 PIN 10 PIN 1 INDICATOR 0.118 (3.00 mm) ± 0.006 (0.15 mm) 0.193 (4.90 mm) ± 0.006 (0.15 mm) PIN 1 0.034 (0.86 mm) ± 0.004 (0.10 mm) 0.118 (3.00 mm) ± 0.006 (0.15 mm) 8˚–16˚ 0˚–6˚ 0.0197 (0.500 mm) BSC Description The AS177-86 is a GaAs FET IC SPDT switch packaged in a MSOP-10 plastic package for low cost, high isolation commercial applications. Ideal building block for base station dual band applications where synthesizer isolation is critical. Use in conjunction with the AS165-59 SPST switch to meet GSM synthesizer isolation requirements. 0.009 (0.23 mm) REF. 0.043 (1.09 mm) MAX. 0.022 (0.55 mm) ± 0.006 (0.15 mm) 0.006 (0.15 mm) MAX. 0.002 (0.05 mm) MIN. Electrical Specifications at 25°C (0, +3 V), (0, +5 V) Parameter1 Insertion Loss3 Condition Frequency2 DC–1.0 GHz 1.0–2.0 GHz 2.0–3.0 GHz J1–J2/J1–J3 J1–J2/J1–J3 DC–2.0 GHz 2.0–2.5 GHz 2.5–3.0 GHz DC–3.0 GHz 44/50 41/44 34 Min. Typ. 0.7 0.8 0.9 48/55 46/50 40 1.3:1 1.5:1 Max. 0.85 1.00 1.20 Unit dB dB dB dB dB Isolation VSWR4 Operating Characteristics at 25°C (0, +5 V) Parameter Switching Characteristics5 Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru +3 V +5 V Two-tone I...