PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC–2 GHz
AS173-73 Features
I High Linearity (50 dBm IP3 @ 0.9 ...
Description
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC–2 GHz
AS173-73 Features
I High Linearity (50 dBm IP3 @ 0.9 GHz) @3V I Low Insertion Loss (0.35 dB @ 0.9 GHz) I Isolation (21 dB @ 0.9 GHz) I +3 V Operation I Ultra Miniature SOT-6 Package I PHEMT Process
SOT-6
0.074 (1.90 mm REF.) PIN 6 PIN 1 INDICATOR PIN 1 0.020 (0.51 mm) 0.014 (0.350 mm) 0.057 (1.45 mm) 0.035 (0.90 mm) 0.126 (3.20 mm) 0.087 (2.20 mm) 0.071 (1.80 mm) 0.052 (1.30 mm)
0.037 (0.95 mm) REF. 0.012 (0.30 mm) TYP. 0.014 (0.26 mm) 0.004 (0.10 mm) 5.0˚ ± 1˚
Description
The AS173-73 is a PHEMT GaAs FET IC high linearity SPDT switch in a SOT-6 plastic package. This switch has been designed for use where extremely high linearity, low insertion loss and ultra miniature package size are required. It can be controlled with positive, negative or a combination of both voltages. Some standard implementations include antenna changeover, T/R and
0.006 (0.15 mm) 0.000 (0.00 mm)
5.0˚ ± 1˚
0.122 (3.10 mm) 0.106 (2.70 mm)
0.022 (0.61 mm) 0.004 (0.10 mm)
diversity switching over 2 W. The AS173-73 switch can be used in many analog and digital wireless communication systems including cellular, GSM and DECT applications.
Electrical Specifications at 25°C (0, +3 V)
Parameter1 Insertion Loss3 Frequency2 DC–0.5 GHz DC–1.0 GHz DC–2.0 GHz DC–0.5 GHz DC–1.0 GHz DC–2.0 GHz DC–1.0 GHz DC–2.0 GHz 23 18 11 Min. Typ. 0.35 0.35 0.55 26 20 14 1.2:1 1.3:1 1.4:1 1.8:1 Max. 0.40 0.50 0.70 Unit dB dB dB dB dB dB dB dB
Isolation
VS...
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