AS006M2-00

GaAs IC SPDT Switch Chip DC–6 GHz With Independent Bias Control AS006R2-00, AS006M2-00 Features I Independent Bias Control of Series and Shunt FETs I Non-Reflective or Reflective Option I Excellent Intermodulation and Temperature Stability I Fast Switching, Low Transients Description The AS006R2-00 and AS006M2-00 are designed for applications up to 6 GHz which require low loss and medium isolation. The chip is a rugged .008" thick, and has a fully passivated surface allowing for ease of handling for MCM assemblies. Ti/W/Au gate metal makes this product ideal for commercial, SatCom and military applications. Electrical Specifications at 25°C Parameter1 Insertion Loss2 Isolation VSWR3 Frequency5 DC–1.0 GHz DC–2.0 GHz DC–4.0 GHz DC–6.0 GHz DC–1.0 GHz DC–2.0 GHz DC–4.0 GHz DC–6.0 GHz DC–1.0 GHz DC–2.0 GHz DC–4.0 GHz DC–6.0 GHz Chip Outline 0.045 (1.14 mm) 0.041 (1.04 mm) 0.023 (0.57 mm) 0.004 (0.10 mm) 0.000 (0.00 mm) 0.033 (0.83 mm) 0.026 (0.66 mm) 0.019 ...