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ARF794HT

Power Semiconductors

FAST RECOVERY DIODE

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +3...


Power Semiconductors

ARF794HT

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION mar 03 - ISSUE : 2 ARF794HT Repetitive voltage up to Mean forward current Surge current 6000 V 1060 A 20 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 6000 6100 V V mA 3200 V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 125 1060 1110 20 2000 x1E3 25 125 125 5.6 2.10 1.40 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING Q rr I rr t rr Q rr I rr s E V OFF FR Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= VR = IF= di/dt= VR = 1000 A 100 V 1000 A 500 A/µs V di/dt= 250 A/µs 125 125 µC A µs 400...




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