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ARF671

Power Semiconductors

FAST RECOVERY DIODE

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +3...


Power Semiconductors

ARF671

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION giu 00 - ISSUE : 02 ARF671 Repetitive voltage up to Mean forward current Surge current 4500 V 790 A 15 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 4500 4600 80 2800 V V mA V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = =2500 A 125 790 820 15 1125 x1E3 125 125 125 4.65 1.90 1.100 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING Q rr I rr t rr Q rr I rr s E V OFF FR Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= VR = IF= di/dt= VR = 1000 A 100 V 2100 A 1000 A/µs 1800 V di/dt= 250 A/µs 125 125 1000...




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