ARF463B

D G S TO-247 ARF463A ARF463B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. Specified 125 Volt, 81.36 MHz Characteristics: Output Power = 100 Watts. Gain = 15dB (Class AB) Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Low Cost Common Source RF Package. Low Vth thermal coefficient. Low Thermal Resistance. Optimized SOA for Superior Ruggedness. Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. P E R 1 M I L A IN All Ratings: TC = 25°C unless otherwise specified. ARF463A/B UNIT Volts Y R 500 500 9 ±30 180 0.50 -55 to 150 300 Amps Volts Watts °C/W °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage (I D(ON) = 4.5A, VGS = 10V) MIN TYP MAX UNIT Volts 500 5.0 25 µA Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 ...