ARF448A

D G S TO-247 ARF448A ARF448B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: Output Power = 250 Watts. Gain = 15dB (Class C) Efficiency = 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF448A/448B UNIT Volts 450 450 15 ±30 230 0.55 -55 to 150 300 Amps Volts Watts °C/W °C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1 MIN TYP MAX UNIT Volts 450 3 25 250 ±100 5 2 8.5 5 nA mhos Volts µA VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (ID(ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VG...