ARF442

D TO-247 G S ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION (1-15MHz ) POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. Specified 100 Volt, 13.56 MHz Characteristics: Output Power = 200 Watts. Gain = 22dB (Typ.) Efficiency = 73% (Typ.) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF442/443 UNIT Volts 300 300 8 ±30 167 0.75 -55 to 150 300 Amps Volts Watts °C/W °C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1 MIN TYP MAX UNIT Volts 300 6 250 1000 ±100 3.5 2 4.5 5 nA mhos Volts µA VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (ID(ON) = 6.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain C...