FAST RECOVERY DIODE
ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6...
Description
ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF422
Repetitive voltage up to Mean forward current Surge current 1600 V 940 A 14 kA
TARGET SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj [°C]
Value
Unit
BLOCKING
V RRM V RSM I
RRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM
125 125 125
1600 1700 50
V V mA
CONDUCTING
I I I
F (AV)
Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 125
940 930 14 980 x1E3
A A kA A²s V V mohm
F (AV) FSM
I² t V FM V F(TO) r
F
Forward current = 1200 A
125 125 125
1.57 1.20 0.350
SWITCHING
t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery di/dt= 100 A/µs 125 I F = 1000 A di/dt= VR = 60 A/µs 50 V 120 0.5 5 V A 125 3.5 200 µs µC
MOUNTING
R th(j-h) T F
j
Thermal impedance Operating junction temperature Mounting force Mass
Junction to heatsink, double side cooled
37 -30 / 125 11.8 / 13.2 300
°C/kW °C kN g
ORDERING INFORMATION : ARF422 S 16 standard specification
VR...
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