ARF1500

S D S ARF1500 D G S ARF1500 BeO 135-05 RF POWER MOSFET • Specified 150 Volt, 27.12 MHz Characteristics: • Output Power = 900 Watts. • Gain = 17dB (Class C) • Efficiency > 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C N - CHANNEL ENHANCEMENT MODE S G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF 1500 UNIT Volts Amps Volts Watts °C 500 500 60 ±30 1500 -55 to 200 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS g fs V isolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts µA nA mhos Volts 500 5.5 100 1000 ±400 3 2500 3 5 5.8 (ID(ON) = 30A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Tran...