AT27BV800

Features Read Access Time - 120 ns Word-wide or Byte-wide Configurable Dual Voltage Range Operation – Unregulated Battery Power Supply Range, 2.7V to 3.6V or Standard 5V ± 10% Supply Range 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Operation – 20 µA Maximum Standby – 10 mA Max. Active at 5 MHz for VCC = 3.6V JEDEC Standard Packages – 44-Lead PLCC – 44-Lead SOIC (SOP) – 48-Lead TSOP (12 mm x 20 mm) High Reliability CMOS Technology – 2,000 ESD Protection – 200 mA Latchup Immunity Rapid™ Programming Algorithm - 50 µs/word (typical) CMOS and TTL Compatible Inputs and Outputs – JEDEC Standard for LVTTL and LVBO Integrated Product Identification Code Commercial and Industrial Temperature Ranges Description The AT27BV800 is a high performance low-power, low-voltage 8,388,608-bit one time programmable read only memory (OTP EPROM) organized as either 512K by 16 or 1024K by 8 bits. It requires only one supply in the range of 2.7 to 3.6V in normal read (continued) PLCC 8-Megabit (512K x 16 or 1024K x 8) Unregulated Battery-Voltage™ High Speed OTP EPROM AT27BV800 Preliminary Pin Configurations Pin Name A0 - A18 O0 - O15 O15/A-1 BYTE/VPP CE OE NC Function Addresses Outputs Output/Address Byte Mode/ Program Supply Chip Enable Output Enable No Connect SOIC (SOP) NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE O0 O8 O1 O9 O2 O10 O3 O11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23...