AT002N5-11

GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-11 Features I Dual Control Voltages I Low Insertion Loss I 8 Lead Hermetic Surface Mount Package I Capable of Meeting MIL-STD Requirements5 -11 ORIENTATION MARK 0.180 (4.57 mm) SQ. MAX. 0.150 (3.81 mm) 0.017 (0.43 mm) 0.013 (0.33 mm) 0.050 (1.27 mm) TYP. 0.400 (10.16 mm) 0.380 (9.65 mm) Description The AT002N5-11 is a GaAs IC FET absorptive attenuator. This device provides up to 50 dB variable attenuation from DC–3 GHz. Attenuation can be controlled by varying each of the two control bias voltages from 0 to -5 V. This attenuator is recommended for fast response AGC circuits in commercial and high reliability applications. 0.070 (1.78 mm) 0.040 (1.02 mm) 0.075 (1.91 mm) MAX. 0.006 (0.15 mm) 0.004 (0.10 mm) 0.250 (6.35 mm) 0.200 (5.08 mm) Electrical Specifications at 25°C Parameter1 Insertion Loss2 Frequency4 DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz DC–1.0 GHz DC–2.0 GHz DC–3.0 GHz 50 45 40 Min. Typ. 1.2 1.4 1.7 52 48 42 1.2:1 1.4:1 1.6:1 1.3:1 1.5:1 1.8:1 Max. 1.4 1.8 2.0 Unit dB dB dB dB dB dB Attenuation Range VSWR (I/O) Operating Characteristics at 25°C Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru3 For All Attenuation Levels VLow = 0 to -0.2 V @ 20 µA Max. VHigh = -5 V @ 100 µA Max. 0.5–3 GHz 0.05 GHz Frequency Min. Typ. 10 15 20 0 -3 Max. Unit ns ns mV dBm dBm Input Power for 1 dB Compr...