Document
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
CT75AM-12
OUTLINE DRAWING
20MAX.
Dimensions in mm 5 2
φ 3.2
6
1
2
1 1 2 3
20.6MIN.
2.5
26
4
0.5 5.45 5.45 3
4.0 wr
¡VCES ............................................................................... 600V ¡IC ......................................................................................... 75A ¡High Speed Switching ¡Low VCE Saturation Voltage
q
e
q GATE w COLLECTOR e EMITTER r COLLECTOR
TO-3PL
APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc.
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM PC Tj Tstg —
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V
Conditions
Ratings 600 ±20 ±30 75 150 300 –40 ~ +150 –40 ~ +150 9.8
Unit V V V A A W °C °C g
Feb.1999
Typical value
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance
(Tj = 25°C)
Test conditions IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V VCE = 600V, VGE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz
Limits Min. 600 — — 4.5 — — — — — — — — — Typ. — — — 6.0 2.5 3100 400 130 40 265 175 245 — Max. — ±0.5 1 7.5 3.0 — — — — — — — 0.42
Unit V µA mA V V pF pF pF ns ns ns ns °C/W
VCC = 300V, Resistance load, IC = 75A, VGE = 15V, RGE = 10Ω Junction to case
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
100
COLLECTOR CURRENT IC (A)
VGE = 20V
OUTPUT CHARACTERISTICS (TYPICAL)
15V Tj = 25°C 12V PC = 300W
10
Tj = 25°C
80
8
60
11V
6
40
10V
4
150A 75A
20
9V
2
30A
0
0
2
4
6
8
10
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V)
5
4
COLLECTOR CURRENT IC (A)
VGE = 15V Tj = 25°C
COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 100
VCE = 10V Tj = 25°C
80
3
60
2
40
1
20
0
0
20
40
60
80
100
0
0
4
8
12
16
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE Cies, Coes, Cres (pF)
SWITCHING TIME (ns)
CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 Cies 3 2 103 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V
f = 1MHZ
SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 0 10 2 3 5 7 101
tr td(off) tf
Coes
td(on) Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω
Cres
101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
2 3
5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20
VCE = 200V
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100
TRANSIENT THERMAL IMPEDANCE Zth ( j – c)
7 5 3 2
16
300V
10–1
7 5 3 2 7 5 3 2
12
8
10–2
7 5 3 2
10–2
7 5 3 2
4
0
0
40
80
120
160
200
10–3
10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s)
Feb.1999
GATE CHARGE Qg (nc)
.