MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT35SM-8
STROBE FLASHER USE
CT35SM-8
OUTLINE DRAWING
15.9MAX.
Dimension...
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT35SM-8
STROBE FLASHER USE
CT35SM-8
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e
q
¡VCES ................................................................................ 400V ¡ICM .................................................................................... 200A
TO-3P
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
Ratings 400 ±30 ±40 200 –40 ~ +150 –40 ~ +150
Unit V V V A °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25°C)
Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA
Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0
Unit V µA µA V
Feb.1999
Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT35SM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000µF 160 MAXIMUM PULSE COLLECTOR CURRENT 2000
PULSE COLLECTOR CURRENT ICM (A)
MAIN CAPACITOR CM (µF)
1600
120
< 70°C...
