A28F010

A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles Minimum over Automotive Temperature Range 12 0V g 5% VPP High-Performance Read 120 ns Maximum Access Time CMOS Low Power Consumption 30 mA Maximum Active Current 300 mA Maximum Standby Current Y Y Integrated Program Erase Stop Timer Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM III Flash Nonvolatile Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic DIP 32-Lead PLCC (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket onboard during subassembly test in-system during final test and in-system after-sale The 28F010 increases memory flexibility while contributing to time- and cost-savings The 28F010 is a 1024-kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel’s 28F01...