2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applicatio...
2SA1015(L)
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications Low Noise Amplifier Applications
High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max)
Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz) Complementary to 2SC1815 (L)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −50 V
Collector-emitter voltage
VCEO −50 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−150
mA
Base current
IB −50 mA
Collector power dissipation
PC 400 mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
JEDEC JEITA
TO-92 SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
temperature/current/voltage and the significant change in temperature,
2-5F1B
etc.) may cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.)
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics ...