DatasheetsPDF.com

ACST8 Dataheets PDF



Part Number ACST8
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Overvoltage protected AC switch
Datasheet ACST8 DatasheetACST8 Datasheet (PDF)

ACST8 Datasheet 8 A - 800 V overvoltage protected AC switch OUT TO-220AB G OUT COM G OUT COM TO-220FPAB OUT D²PAK G COM OUT G COM Product status link ACST8 Product summary IT(RMS) 8A VDRM/VRRM 800 V IGT 30 mA Features • Triac with overvoltage protection • High noise immunity: static dV/dt > 2000 V/μs • TO-220FPAB insulated package: – complies with UL standards (File ref : E81734) – insulation voltage: 2000 VRMS • Benefits: – Enables equipment to meet IEC 61000-4-5 – High off-.

  ACST8   ACST8


Document
ACST8 Datasheet 8 A - 800 V overvoltage protected AC switch OUT TO-220AB G OUT COM G OUT COM TO-220FPAB OUT D²PAK G COM OUT G COM Product status link ACST8 Product summary IT(RMS) 8A VDRM/VRRM 800 V IGT 30 mA Features • Triac with overvoltage protection • High noise immunity: static dV/dt > 2000 V/μs • TO-220FPAB insulated package: – complies with UL standards (File ref : E81734) – insulation voltage: 2000 VRMS • Benefits: – Enables equipment to meet IEC 61000-4-5 – High off-state reliability with planar technology – Needs no external overvoltage protection – Reduces the power passive component count – High immunity against fast transients described in IEC 61000-4-4 standards Applications • AC mains static switching in appliance and industrial control systems • Drive of medium power AC loads such as: – Universal drum motor of washing machine – Compressor of fridge or air conditioner Description The ACST8 series belongs to the ACS/ACST power switch family built around A.S.D. (application specific discrete) technology. This high performance device is suited to home appliances or industrial systems and drives an induction motor up to 8 A. This ACST8 switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standards. ACST8 shows a high noise immunity complying with IEC standards such as IEC 61000-4-4 (fast transient burst test). DS2106 - Rev 11 - September 2021 For further information contact your local STMicroelectronics sales office. www.st.com ACST8 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter IT(RMS) On-state rms current (full sine wave) TO-220FPAB TO-220AB, D²PAK D²PAK with 1 cm² copper Tc = 91 °C Tc = 105 °C Tamb = 43 °C ITSM Non repetitive surge peak onstate current Tj initial = 25 °C, (full cycle sine wave) f = 50 Hz f = 60 Hz tp = 20 ms tp = 16.7 ms I2t I2t for fuse selection tp = 10 ms Critical rate of rise on-state dI/dt current IG = 2 x IGT, tr ≤ 100 ns f = 120 Hz Tj = 125 °C VPP(1) Non repetitive line peak pulse voltage Tj = 25 °C PG(AV) Average gate power dissipation Tj = 125 °C PGM Peak gate power dissipation (tp = 20 ms) Tj = 125 °C IGM Peak gate current (tp = 20 ms) Tj = 125 °C Tstg Storage temperature range Tj Operating junction temperature range TL Lead temperature for soldering during 10 s (at 3 mm from plastic case) Vins Insulation rms voltage (60 seconds) for TO-220FPAB 1. according to test described by standard IEC 61000-4-5 standard and Figure 17 Value Unit 8 A 2 80 A 84 42 A2s 100 A/μs 2 kV 0.1 W 10 W 1.6 A -40 to +150 °C -40 to +125 °C 260 °C 2000 V Table 2. Electrical characteristics per switch Symbol Test conditions IGT (1) VGT VOUT = 12 V, RL = 33 Ω VGD VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C IH(2) IOUT = 500 mA IL dV/dt(2) (dI/dt)c(2) IG = 1.2 x IGT VOUT = 67% VDRM, gate open, Tj = 125 °C Without snubber, Tj = 125 °C VCL ICL = 0.1 mA, tp = 1 ms 1. Minimum IGT is guaranteed at 5% of IGT max 2. For both polarities of OUT pin referenced to COM pin Quadrant I - II - III I - II - III I - II - III Value Unit Max. 30 mA Max. 1.0 V Min. 0.2 V Max. 30 mA Max. 50 mA Min. 2000 V/µs Min. 8 A/ms Min. 850 V DS2106 - Rev 11 page 2/17 ACST8 Characteristics Table 3. Static characteristics Symbol Test conditions VTM (1) VT0(1) RD(1) IOUT = 11.3 A, tp = 500 μs Threshold voltage Dynamic resistance IDRM IRRM VOUT = VDRM/ VRRM 1. For both polarities of OUT pin referenced to COM pin Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Value Unit Max. 1.5 V Max. 0.9 V Max. 50 mΩ 20 µA Max. 1 mA Symbol Rth(j-a) Rth(j-c) Table 4. Thermal characteristics Parameter Junction to ambient Junction to ambient (soldered on 1cm² copper pad) Junction to case (AC) TO-220FPAB, TO-220AB D²PAK TO-220FPAB TO-220AB, D²PAK Value Unit 60 45 °C/W 3.6 2 DS2106 - Rev 11 page 3/17 ACST8 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus RMS onstate current P(W) 10 α = 180° 180° 9 8 7 6 5 4 3 2 1 IT(RMS)(A) 0 0 1 2 3 4 5 6 7 8 Figure 2. On-state RMS current versus case temperature (full cycle) IT(RMS) (A) 9 α =180° 8 7 6 5 4 3 2 1 0 0 25 TO 220FPAB TO-220AB D²PAK TC (°C) 50 75 100 125 Figure 3. On-state RMS current versus ambient temperature (free air convection, full cycle) IT(RMS)(A) 3.0 2.5 2.0 TO-220 1.5 D2PAK Copper surface = 1cm2 1.0 0.5 0.0 0 Tamb (°C) 25 50 75 α=180° 100 125 Figure 4. Relative variation of thermal impedance versus pulse duration K=[Z th /Rth ] 1.0E+00 TO-220AB Zth(j-c) Zth(j-a) TO-220FPAB 1.0E-01 TO-220AB TO-220FPAB 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tp(s) 1.0E+02 1.0E+03 Figure .


ACST6-7S ACST8 93LCS66


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)