Document
ACST8
Datasheet
8 A - 800 V overvoltage protected AC switch
OUT
TO-220AB
G
OUT COM
G
OUT COM
TO-220FPAB
OUT
D²PAK
G COM
OUT
G
COM
Product status link ACST8
Product summary
IT(RMS)
8A
VDRM/VRRM
800 V
IGT
30 mA
Features
• Triac with overvoltage protection • High noise immunity: static dV/dt > 2000 V/μs • TO-220FPAB insulated package:
– complies with UL standards (File ref : E81734) – insulation voltage: 2000 VRMS • Benefits: – Enables equipment to meet IEC 61000-4-5 – High off-state reliability with planar technology – Needs no external overvoltage protection – Reduces the power passive component count – High immunity against fast transients described in IEC 61000-4-4 standards
Applications
• AC mains static switching in appliance and industrial control systems • Drive of medium power AC loads such as:
– Universal drum motor of washing machine – Compressor of fridge or air conditioner
Description
The ACST8 series belongs to the ACS/ACST power switch family built around A.S.D. (application specific discrete) technology. This high performance device is suited to home appliances or industrial systems and drives an induction motor up to 8 A. This ACST8 switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standards. ACST8 shows a high noise immunity complying with IEC standards such as IEC 61000-4-4 (fast transient burst test).
DS2106 - Rev 11 - September 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
ACST8
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
IT(RMS)
On-state rms current (full sine wave)
TO-220FPAB TO-220AB, D²PAK D²PAK with 1 cm² copper
Tc = 91 °C Tc = 105 °C Tamb = 43 °C
ITSM
Non repetitive surge peak onstate current Tj initial = 25 °C, (full cycle sine wave)
f = 50 Hz f = 60 Hz
tp = 20 ms tp = 16.7 ms
I2t
I2t for fuse selection
tp = 10 ms
Critical rate of rise on-state
dI/dt
current
IG = 2 x IGT, tr ≤ 100 ns
f = 120 Hz
Tj = 125 °C
VPP(1)
Non repetitive line peak pulse voltage
Tj = 25 °C
PG(AV)
Average gate power dissipation
Tj = 125 °C
PGM
Peak gate power dissipation (tp = 20 ms)
Tj = 125 °C
IGM
Peak gate current (tp = 20 ms)
Tj = 125 °C
Tstg
Storage temperature range
Tj
Operating junction temperature range
TL
Lead temperature for soldering during 10 s (at 3 mm from plastic case)
Vins
Insulation rms voltage (60 seconds) for TO-220FPAB
1. according to test described by standard IEC 61000-4-5 standard and Figure 17
Value
Unit
8 A
2 80
A 84
42
A2s
100
A/μs
2
kV
0.1
W
10
W
1.6
A
-40 to +150
°C
-40 to +125
°C
260
°C
2000
V
Table 2. Electrical characteristics per switch
Symbol
Test conditions
IGT (1) VGT
VOUT = 12 V, RL = 33 Ω
VGD
VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C
IH(2)
IOUT = 500 mA
IL dV/dt(2) (dI/dt)c(2)
IG = 1.2 x IGT VOUT = 67% VDRM, gate open, Tj = 125 °C Without snubber, Tj = 125 °C
VCL
ICL = 0.1 mA, tp = 1 ms
1. Minimum IGT is guaranteed at 5% of IGT max 2. For both polarities of OUT pin referenced to COM pin
Quadrant I - II - III I - II - III
I - II - III
Value Unit
Max. 30 mA
Max. 1.0
V
Min. 0.2
V
Max. 30 mA
Max. 50 mA
Min. 2000 V/µs
Min. 8 A/ms
Min. 850 V
DS2106 - Rev 11
page 2/17
ACST8
Characteristics
Table 3. Static characteristics
Symbol
Test conditions
VTM (1) VT0(1) RD(1)
IOUT = 11.3 A, tp = 500 μs Threshold voltage Dynamic resistance
IDRM IRRM
VOUT = VDRM/ VRRM
1. For both polarities of OUT pin referenced to COM pin
Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C
Value Unit
Max. 1.5
V
Max. 0.9
V
Max. 50 mΩ
20 µA
Max.
1
mA
Symbol Rth(j-a) Rth(j-c)
Table 4. Thermal characteristics
Parameter Junction to ambient Junction to ambient (soldered on 1cm² copper pad)
Junction to case (AC)
TO-220FPAB, TO-220AB D²PAK TO-220FPAB TO-220AB, D²PAK
Value Unit 60 45 °C/W 3.6 2
DS2106 - Rev 11
page 3/17
ACST8
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus RMS onstate current
P(W)
10
α = 180°
180°
9
8
7
6
5
4
3
2
1
IT(RMS)(A)
0
0
1
2
3
4
5
6
7
8
Figure 2. On-state RMS current versus case temperature (full cycle)
IT(RMS) (A)
9 α =180°
8
7
6
5
4
3
2
1
0
0
25
TO 220FPAB
TO-220AB D²PAK
TC (°C)
50
75
100
125
Figure 3. On-state RMS current versus ambient temperature (free air convection, full cycle)
IT(RMS)(A)
3.0
2.5
2.0
TO-220
1.5
D2PAK Copper surface
= 1cm2
1.0
0.5
0.0 0
Tamb (°C)
25
50
75
α=180°
100
125
Figure 4. Relative variation of thermal impedance versus pulse duration
K=[Z th /Rth ]
1.0E+00 TO-220AB
Zth(j-c)
Zth(j-a)
TO-220FPAB
1.0E-01
TO-220AB
TO-220FPAB
1.0E-02 1.0E-03
1.0E-02
1.0E-01
1.0E+00 1.0E+01
tp(s)
1.0E+02 1.0E+03
Figure .