TM ACS00MS
April 1995
Radiation Hardened Quad 2-Input NAND Gate
Features
1.25 Micron Radiation Hardened SOS CMOS
Total Dose 300K RAD (Si)
Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ)
SEU LET Threshold >80 MEV-cm2/mg Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse Latch-Up Free Under Any Conditions Military Temperature Range...
