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ABR804 Dataheets PDF



Part Number ABR804
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description AVALANCHE BRIDGE RECTIFIERS
Datasheet ABR804 DatasheetABR804 Datasheet (PDF)

www.eicsemi.com ABR800 - ABR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * ldeal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols.

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www.eicsemi.com ABR800 - ABR810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * ldeal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams AVALANCHE BRIDGE RECTIFIERS BR6 0.158 (4.00) 0.142 (3.60) 0.445 (11.30) 0.405 (10.30) AC 0.127 (3.20) 0.047 (1.20) AC 0.62 (15.75) 0.58 (14.73) 0.042 (1.06) 0.038 (0.96) 0.27 (6.9) 0.23 (5.8) 0.75 (19.1) Min. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Avalanche Breakdown Voltage at 100 µA Maximum Avalanche Breakdown Voltage at 100 µA Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at IF = 4.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance ( Note 1 ) Operating Junction Temperature Range Storage Temperature Range SYMBOL ABR 800 VRRM 50 VRMS 35 VDC 50 VBO(min.) 100 VBO(max.) 550 IF(AV) ABR 801 100 70 100 150 600 ABR 802 200 140 200 250 700 ABR 804 400 280 400 450 900 8.0 ABR 806 600 420 600 700 1150 ABR 808 800 560 800 900 1350 ABR 810 1000 700 1000 1100 1550 UNIT V V V V V A IFSM 300 A I2t VF IR IR(H) RθJC TJ TSTG 160 1.0 10 10.0 2.5 - 50 to + 150 - 50 to + 150 A2S V µA mA °C/W °C °C Note : 1 ) Thermal resistance from Junction to case with units mounted on a 3.2" x 3.2" x 0.12" ( 8.2 x 8.2 x 0.3 cm ) Al. plate. heatsink. Page 1 of 2 Rev. 02 :March 24, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( ABR800 - ABR810) AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 10 HEAT-SINK MOUNTED ON 8.0 3.2" x 3.2" x0.12" (8.2x8.2x0.3 cm.) Al. PLATE 6.0 4.0 2.0 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 240 180 120 8.3 ms SINGLE SINE WAVE JEDEC METHOD 60 0 1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FORWARD CURRENT, AMPERES FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 TJ = 25 °C 1.0 Pulse Width = 300 µs 1% Duty Cycle 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 REVERSE CURRENT, MICROAMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.010 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Rev. 02 :March 24, 2005 .


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