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ABR1001

EIC discrete Semiconductors

AVALANCHE BRIDGE RECTIFIERS

ABR1000 - ABR1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * High case dielectric strength High surge ...


EIC discrete Semiconductors

ABR1001

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ABR1000 - ABR1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board AVALANCHE BRIDGE RECTIFIERS BR10 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) AC 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams 0.052 (1.32) 0.048 (1.22) 0.75 (19.1) Min. 0.30 (7.62) 0.25 (6.35) Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Avalanche Breakdown Voltage at 100 µA Maximum Avalanche Breakdown Voltage at 100 µA Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at I F = 5.0 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typ...




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