AA028P1-00

27–29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features I Single Bias Supply Operation (6 V) I 22 dBm Typical P1 dB Output Power at 28 GHz I 13.5 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.329 0.000 0.000 0.519 2.784 3.400 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10% power added efficiency at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the commercial and high reliability areas where high power and gain are required. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 7 VDC 22 dBm 175°C Electrical Specifications at 25°C (VDS =...