Document
IGBT MODULE ( N series ) n Features
• Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)
n Outline Drawing
n Applications
• High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 1200 ± 20 400 800 400 800 3100 +150 -40 ∼ +125 2500 3.5 4.5 1.7 Units V V A W °C °C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=400mA VGE=15V IC=400A VGE=0V VCE=10V f=1MHz VCC=600V IC=400A VGE=± 15V RG=1.8Ω IF=400A VGE=0V IF=400A Min. Typ. Max. 4.0 60 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350
4.5 64000 23200 20640 0.75 0.25 1.05 0.35
µs V ns
• Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.04 0.12 Units °C/W
0.0125
Collector current vs. Collector-Emitter voltage T j=25°C 1000 V GE =20V, 15V, 12V, 10V 800 800
C
Collector current vs. Collector-Emitter voltage T j=125°C 1000 V GE =20V, 15V, 12V, 10V
C
[A]
600
Collector current : I
[A]
600
Collector current : I
400
400 8V
200
8V
200
0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V]
0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V]
Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10
Collector-Emitter vs. Gate-Emitter voltage T j=125°C
[V]
CE
Collector-Emitter voltage :V
6
Collector-Emitter voltage V
CE
8
[V]
8 6 4 4
2
IC= 800A 400A 200A
I C= 800A 400A 200A
2
0 0 5 10 15 20 25 Gate-Emitter voltage : V G E [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : V G E [V]
Switching time vs. Collector current V CC =600V, R G =1.8 Ω , V GE ±15V, Tj=25°C t off
Switching time vs. Collector current V CC =600V, R G =1.8 Ω , V GE =±15V, Tj=125°C t off t on tf tr
1000
1000
[nsec]
on, t r, t off, t f
tr
Switching time : t
10 0 200 400 600 800 Collector current : I C [A]
Switching time : t
100
on, t r, t off, t f
tf
[nsec]
100 10 0 200 400 600
.