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1MBI400NA-120 Dataheets PDF



Part Number 1MBI400NA-120
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 1MBI400NA-120 Datasheet1MBI400NA-120 Datasheet (PDF)

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Curr.

  1MBI400NA-120   1MBI400NA-120



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IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 1200 ± 20 400 800 400 800 3100 +150 -40 ∼ +125 2500 3.5 4.5 1.7 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=400mA VGE=15V IC=400A VGE=0V VCE=10V f=1MHz VCC=600V IC=400A VGE=± 15V RG=1.8Ω IF=400A VGE=0V IF=400A Min. Typ. Max. 4.0 60 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 64000 23200 20640 0.75 0.25 1.05 0.35 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.04 0.12 Units °C/W 0.0125 Collector current vs. Collector-Emitter voltage T j=25°C 1000 V GE =20V, 15V, 12V, 10V 800 800 C Collector current vs. Collector-Emitter voltage T j=125°C 1000 V GE =20V, 15V, 12V, 10V C [A] 600 Collector current : I [A] 600 Collector current : I 400 400 8V 200 8V 200 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 Collector-Emitter vs. Gate-Emitter voltage T j=125°C [V] CE Collector-Emitter voltage :V 6 Collector-Emitter voltage V CE 8 [V] 8 6 4 4 2 IC= 800A 400A 200A I C= 800A 400A 200A 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V G E [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V G E [V] Switching time vs. Collector current V CC =600V, R G =1.8 Ω , V GE ±15V, Tj=25°C t off Switching time vs. Collector current V CC =600V, R G =1.8 Ω , V GE =±15V, Tj=125°C t off t on tf tr 1000 1000 [nsec] on, t r, t off, t f tr Switching time : t 10 0 200 400 600 800 Collector current : I C [A] Switching time : t 100 on, t r, t off, t f tf [nsec] 100 10 0 200 400 600 .


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