Infrared Emitting Diodes(GaAlAs)
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
AL-402
DIMENSIONS
The AL-402 is a high-power GaAlAs IRED, with precis...
Description
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
AL-402
DIMENSIONS
The AL-402 is a high-power GaAlAs IRED, with precision optical designed attachment lens. It emits parallel infrared lights.
(Unit : mm)
FEATURES
¶UParallel rays ¶ULow profile ¶Usidelooking plastic package
APPLICATIONS
¶U Encoders ¶UEmitters for automatic focusing
MAXIMUM RATINGS
Item
Reverse voltage Forward current Pulse forward current Power dissipation Operating temp. Storage temp. *1 Soldering temp.
(Ta=2° 5…)
Symbol
VR F I FP I PD Topr. Tstg. Tsol.
Rating
5 100 0.3 150 -25~+70 -30~+80 240
Unit
V mA A mW °… °… °…
*1. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle Effective emitting diameter
(Ta=2° 5…)
Symbol
VF R I Ct PO Îp ƒÎ °‚Ë D
Conditions
F=50mA I VR=5V f=1MHz F=50mA I F=50mA I F=50mA I
Min.
Typ.
1.4 20 2.2 910 50 ®™ 3.9
Max.
2.0 10
Unit.
V Ï A pF mW/sr nm nm deg. mm
12
- 1-
Infrared Emitting Diodes(GaAlAs)
AL-402
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current Vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
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