AJT150

AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT150 is Designed for PACKAGE STYLE .400 2L FLG (A) 4x .062 x 45° 2xB A .040 x 45° C E D F FEATURES: Input Matching Network Omnigold™ Metalization System DIM G H J K 2xR I L N M MINIMUM inches / mm P MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC O A B C D E .135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 .145 / 3.68 .120 / 3.05 10 A 60 V 35 V 140 W -65 C to +200 C -65 OC to +150 OC 0.57 OC/W O .396 / 10.06 .130 / 3.30 .407 / 10.34 F G H I J K L .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 O M N P ORDER CODE: ASI10548 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE PG ηC IC = 50 mA IC = 50 mA IE = 10 mA VBE = 50 V TC = 25 C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --dB % VCE = 5.0 V VCc = 50 V IC = 1.0 A POUT = 150 W f = 960 - 1215 MHz 10 7.5 40 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...