AJT030

AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L N J A B E D K O DESCRIPTION: The ASI AJT030 is Designed for C .062 x 45° M Ø .120 P I Q R FEATURES: Input Matching Network Omnigold™ Metalization System F H G DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm .140 / 3.56 .110 / 2.80 .110 / 2.80 .395 / 10.03 .193 / 4.90 .230 / 5.84 .003 / 0.08 .118 / 3.00 .063 / 1.60 .650 / 16.51 .386 / 9.80 .900 / 22.86 .450 / 11.43 .125 / 3.18 .050 / 1.27 .405 / 10.29 .170 / 4.32 .062 / 1.58 .006 / 0.15 .131 / 3.33 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O E F G H I 3.5 A 40 V 75 W @ TC ≤ 85 C O O J K L M N O P Q -65 C to +250 C -65 OC to +200 OC 2.2 OC/W R ORDER CODE: ASI10546 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 20 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 55 3.5 5.0 UNITS V V V mA --dB % IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCC = 50 V IC = 1.0 A POUT = 30 W f = 960 - 1215 MHz 15 7.8 40 150 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...